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BPN862: MoS2 Transistors with 1-Nanometer Gate Lengths

Project ID BPN862
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Start Date Tue 2017-Jan-31 13:44:40
Last Updated Wed 2017-Feb-01 08:42:53
Abstract MoS2 transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing ~65 millivolts per decade and an On/Off current ratio ~10^6. Simulations show an effective channel length of ~3.9 nm in the Off-state and ~1 nm in the On-state. The work here provides new insight into the ultimate scaling of gate lengths for a FET by surpassing the 5 nm limit often associated with Si technology. Future work involves improving the performance of these short-gate length transistors.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Sujay B. Desai
Advisor(s) Ali Javey
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