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BSAC4: DRIE Process Optimization for Very Smooth Sidewall Etch

Project ID BSAC4
Website
Start Date Wed 2004-Aug-18 13:11:44
Last Updated Fri 2004-Sep-10 19:09:01
Abstract Long term goal for this project is to develop a robust deep reactive ion etch process for a smooth sidewall through wafer etching, while maintaining a straight profile, good etch rate, and reasonable selectivity.
Status New
Funding Source Federal
IAB Research Area Package, Process & Microassembly
Researcher(s) Ning Chen
Advisor(s) Matthew Wasilik
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Summary Slide PDF | VIDEO
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