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BPN867: Fully Integrated CMOS-Metal MEMS Systems

Project ID BPN867
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Start Date Tue 2017-Jan-31 23:44:21
Last Updated Sun 2018-Jan-28 19:57:39
Abstract As RF MEMS technology evolves to shift towards UHF frequencies, the parasitics inherent in hybrid fabrication approaches become the performance bottleneck. This project aims to integrate metal MEMS resonators directly over CMOS circuitry to achieve fully integrated MEMS systems. Pursuant to this goal, this project proposes several designs for UHF MEMS bandpass filters, exploring how different CMOS-compatible metals can yield performance metrics—such as quality-factor (Q), temperature stability and frequency drift—that are comparable to those of standard polysilicon MEMS resonators.
Status Continuing
Funding Source DARPA
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Kieran A. Peleaux
Advisor(s) Clark T.-C. Nguyen
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