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Researchers
     
 
Sujay Desai, Ph.D. 2018

Electrical Engineering
Advisor: Prof. Javey

BIOGRAPHY

MoS2 Transistors with 1-Nanometer Gate Lengths [BPN862]
MoS2 transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate
electrode are demonstrated. These ultrashort devices exhibit excellent switching characteristics with near
ideal subthreshold swing ~65 millivolts per decade and an On/Off current ratio ~10^6. Simulations show an
effective channel length of ~3.9 nm in the Off-state and ~1 nm in the On-state. The work here provides new
insight into the ultimate scaling of gate lengths for a FET by surpassing the 5 nm limit often associated with
Si technology. Future work involves improving the performance of these transistors and investigating the
properties of other materials like Si at short gate-lengths.


Current Active Projects:
BPN458
BPN862
 

     Last Updated: Tue 2017-Jan-31 14:28:13

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